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preliminary 256k x 36/256k x 32/512k x 18 flowthrough sram cy7c1361v25 cy7c1363v25 CY7C1365V25 cypress semiconductor corporation ? 3901 north first street san jose ca 95134 408-943-2600 december 1, 1999 features ? supports 113-mhz bus operations 256k x 36 / 256k x 32 / 512k x 18 common i/o fast clock-to-output times ? 7.5 ns (for 117-mhz device) ? 8.5 ns (for 100-mhz device) ? 10.0 ns (for 80-mhz device) two-bit wrap-around counter supporting either inter- leaved or linear burst sequences separate processor and controller address strobes provide direct interface with the processor and external cache controller synchronous self-timed writes asynchronous output enable single 2.5v power supply jedec-standard pinout available as a 100-pin tqfp or 119 bga ?zz? sleep mode option functional description the cy7c1361v25, CY7C1365V25 and cy7c1363v25 are 2.5v, 256k x 36, 256k x 32 and 512k x 18 synchronous- flowthrough sram designed to interface with high-speed mi- croprocessors with minimal glue logic. maximum access delay from the clock rise is 7.5 ns (117-mhz device). a 2-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. the cy7c1361v25/CY7C1365V25/cy7c1363v25 supports either the interleaved or linear burst sequences, selected by the mode input pin. a high selects an interleaved burst se- quence, while a low selects a linear burst sequence. burst accesses can be initiated by asserting either the processor address strobe (adsp ) or the controller address strobe (adsc ) at clock rise. address advancement through the burst sequence is controlled by the adv input. byte write operations are qualified with the byte write select (bw a,b,c,d for cy7c1361v25/CY7C1365V25 and bw a,b for cy7c1363v25) inputs. a global write enable (gw ) overrides all byte write inputs and writes data to all four bytes. all writes are conducted with on-chip synchronous self-timed write circuitry. three synchronous chip selects (ce 1 , ce 2 , ce 3 ) and an asynchronous output enable (oe ) provide for easy bank selec- tion and output three-state control. clk a x gw bwe bw x ce 1 ce ce 2 oe 256kx36/ memory array logic block diagram dq x data-in reg. q d ce control and write logic 3 adv dp x mode 7c1361/65 7c1363 a x 512kx18 dq x dp x bw x a [17:0] a [18:0] dq a,b,c,d dq a,b,c,d dp a,b,c,d dp a,b bw a,b,c,d bw a,b adsp adsc zz selection guide 7c1361-133 7c1365-133 7c1363-133 7c1361-117 7c1365-117 7c1363-117 7c1361-100 7c1365-100 7c1363-100 7c1361-80 7c1365-80 7c1363-80 maximum access time (ns) 6.5 7.5 8.5 10.0 maximum operating current (ma) commercial 350 300 260 210 maximum cmos standby current (ma) 10 10 10 10 shaded areas contain advance information.
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 2 pin configurations a a a a a 1 a 0 dnu dnu v ss v dd dnu a a a a a a a a nc,dpb dqb dqb v ddq v ssq dqb dqb dqb dqb v ssq v ddq dqb dqb v ss nc v dd zz dqa dqa v ddq v ssq dqa dqa dqa dqa v ssq v ddq dqa dqa nc,dpa nc,dpc dqc dqc v ddq v ssq dqc dqc dqc dqc v ssq v ddq dqc dqc v dd nc v ss dqd dqd v ddq v ssq dqd dqd dqd dqd v ssq v ddq dqd dqd nc,dpd a a ce 1 ce 2 bw d bw c bw b bw a ce 3 v dd v ss clk gw bwe oe adsc adsp adv a a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 mode cy7c1361/1365 (256k x 36/256k x 32) v ss a a a a a 1 a 0 dnu dnu v ss v dd dnu a a a a a a a a a nc nc v ddq v ssq nc dpa dqa dqa v ssq v ddq dqa dqa v ss nc v dd zz dqa dqa v ddq v ssq dqa dqa nc nc v ssq v ddq nc nc nc nc nc nc v ddq v ssq nc nc dqb dqb v ssq v ddq dqb dqb v dd nc v ss dqb dqb v ddq v ssq dqb dqb dpb nc v ssq v ddq nc nc nc a a ce 1 ce 2 nc nc bw b bw a ce 3 v dd v ss clk gw bwe oe adsc adsp adv a a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 mode cy7c1363 (512k x 18) v ss 100-pin tqfp
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 3 pin configurations (continued) 2 34567 1 a b c d e f g h j k l m n p r t u v ddq nc nc nc,dp c dq c dq d dq c dq d aa aa adsp v ddq ce 2 a dq c v ddq dq c v ddq v ddq v ddq dq d dq d nc nc v ddq v dd clk v dd v ss v ss v ss v ss v ss v ss v ss v ss nc nc dnu v ss tdo tck tdi tms nc nc nc v ddq v ddq v ddq aaa a a a a a a a a0 a1 dq a dq c dq a dq a dq a dq b dq b dq b dq b dq b dq b dq b dq a dq a dq a dq a dq b v dd dq c dq c dq c v dd dq d dq d dq d dq d adsc nc ce 1 oe adv gw v ss v ss v ss v ss v ss v ss v ss v ss nc,dp a mode nc,dp d nc,dp b bw b bw c nc v dd nc bw a nc bwe bw d zz 2 34567 1 a b c d e f g h j k l m n p r t u v ddq nc nc nc dq b dq b dq b dq b aa aa adsp v ddq ce 2 a nc v ddq nc v ddq v ddq v ddq nc nc nc nc v ddq v dd clk v dd v ss v ss v ss v ss v ss v ss v ss v ss nc nc dnu v ss tdo tck tdi tms a a nc v ddq v ddq v ddq anca a a a a a a a a a0 a1 dq a dq b nc nc dq a nc dq a dq a nc nc dq a nc dq a nc dq a nc dq b v dd nc dq b nc v dd dq b nc dq b nc adsc nc ce 1 oe adv gw v ss v ss v ss v ss v ss v ss v ss v ss nc mode dp b dp a v ss bw b nc v dd nc bw a nc bwe v ss zz cy7c1363 (512k x 18) cy7c1361/cy7c1365 (256k x 36, 256k x 32) 119-ball bga a dq d
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 4 pin definitions (100-pin tqfp) x18 pin location x36 pin location name i/o description 37, 36, 32 ? 25, 43 ? 50, 80-82, 99, 100 37, 36, 32 ? 35, 43 ? 50, 81, 82, 99, 100 a0 a1 a input- synchronous address inputs used to select one of the address loca- tions. sampled at the rising edge of the clk if adsp or adsc is active low, and ce 1 , ce 2 , and ce 3 are sam- pled active. a [1:0] feed the 2-bit counter. 93, 94 93, 94, 95, 96 bw a bw b bw c bw d input- synchronous byte write select inputs, active low. qualified with bwe to conduct byte writes to the sram. sampled on the rising edge of clk. 88 88 gw input- synchronous global write enable input, active low. when asserted low on the rising edge of clk, a global write is con- ducted (all bytes are written, regardless of the values on bw a,b,c,d and bwe ). 87 87 bwe input- synchronous byte write enable input, active low. sampled on the rising edge of clk. this signal must be asserted low to conduct a byte write. 89 89 clk input-clock clock input. used to capture all synchronous inputs to the device. also used to increment the burst counter when adv is asserted low, during a burst operation. 98 98 ce 1 input- synchronous chip enable 1 input, active low. sampled on the rising edge of clk. used in conjunction with ce 2 and ce 3 to select/deselect the device. adsp is ignored if ce 1 is high. 97 97 ce 2 input- synchronous chip enable 2 input, active high. sampled on the rising edge of clk. used in conjunction with ce 1 and ce 3 to select/deselect the device. 92 92 ce 3 input- synchronous chip enable 3 input, active low. sampled on the rising edge of clk. used in conjunction with ce 1 and ce 2 to select/deselect the device. 86 86 oe input- asynchronous output enable, asynchronous input, active low. con- trols the direction of the i/o pins. when low, the i/o pins behave as outputs. when deasserted high, i/o pins are three-stated, and act as input data pins. oe is masked during the first clock of a read cycle when emerging from a deselected state. 83 83 adv input- synchronous advance input signal, sampled on the rising edge of clk. when asserted, it automatically increments the address in a burst cycle. 84 84 adsp input- synchronous address strobe from processor, sampled on the rising edge of clk. when asserted low, a is captured in the address registers. a [1:0] are also loaded into the burst counter. when adsp and adsc are both asserted, only adsp is recognized. asdp is ignored when ce 1 is deasserted high. 85 85 adsc input- synchronous address strobe from controller, sampled on the rising edge of clk. when asserted low, a [x:0] is captured in the address registers. a [1:0] are also loaded into the burst counter. when adsp and adsc are both assert- ed, only adsp is recognized. 31 31 mode input- static selects burst order. when tied to gnd selects linear burst sequence. when tied to v ddq or left floating se- lects interleaved burst sequence. this is a strap pin and should remain static during device operation.
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 5 64 64 zz input- asynchronous zz ? sleep ? input. this active high input places the de- vice in a non-time critical ? sleep ? condition with data in- tegrity preserved. (a)58, 59, 62, 63, 68, 69, 72, 73 (b)8, 9, 12, 13, 18, 19, 22, 23 (a)52, 53, 56-59, 62, 63 (b)68, 69, 72 ? 75, 78, 79 (c)2, 3, 6 ? 9, 12, 13 (d)18, 19, 22-25, 28, 29 nc,dq a nc,dq b nc,dq c nc,dq d i/o- synchronous bidirectional data i/o lines. as inputs, they feed into an on-chip data register that is triggered by the rising edge of clk. as outputs, they deliver the data contained in the memory location specified by a during the previous clock rise of the read cycle. the direction of the pins is controlled by oe . when oe is asserted low, the pins behave as outputs. when high, dq x and dp x are placed in a three-state condition. on the cy7c1365 sram, these are not connect pins. 74, 24 51, 80, 1, 30 dp a dp b dp c dp d i/o- synchronous bidirectional data i/o lines. as inputs, they feed into an on-chip data register that is triggered by the rising edge of clk. as outputs, they deliver the data contained in the memory location specified by a during the previous clock rise of the read cycle. the direction of the pins is controlled by oe . when oe is asserted low, the pins behave as outputs. when high, dq a ? dq d and dp a ? dp d are placed in a three-state condition. 15, 41, 65, 91 15, 41, 65, 91 v dd power supply power supply inputs to the core of the device. should be connected to 2.5v power supply. 17, 40, 67, 90 17, 40, 67, 90 v ss ground ground for the core of the device. should be connected to ground of the system. 4, 11, 20, 27, 54, 61, 70, 77 4, 11, 20, 27, 54, 61, 70, 77 v ddq i/o power supply power supply for the i/o circuitry. should be connected to a 2.5v power supply. 5, 10, 21, 26, 55, 60, 71, 76 5, 10, 21, 26, 55, 60, 71, 76 v ssq i/o ground ground for the i/o circuitry. should be connected to ground of the system. 1, 2, 3, 6, 7, 14, 16, 25, 28, 29, 30, 51, 52, 53, 56, 57, 66, 75, 78, 79, 95, 96 16, 66 nc - no connects. 42 42 dnu do not use pins. this pin is used for the address expan- sion to the next density sram. 38, 39 38, 39 dnu do not use pins. these pins should be left floating or tied to v ss . pin definitions (100-pin tqfp) (continued) x18 pin location x36 pin location name i/o description
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 6 pin definitions (119-ball bga) x18 pin location x36 pin location name i/o description 4p, 4n, 2a, 3a, 5a, 6a, 3b, 5b, 2c, 3c, 5c, 6c, 2r, 6r, 2t, 3t, 5t, 6b, 6t 4p, 4n, 2a, 2c, 2r, 3a, 3b, 3c, 3t, 4t, 5a, 5b, 5c, 5t, 6a, 6b, 6c, 6r a0 a1 a input- synchronous address inputs used to select one of the address locations. sampled at the rising edge of the clk if adsp or adsc is active low, and ce 1 , ce 2 , and ce 3 are sampled active. a [1:0] feed the 2-bit counter. 5l, 3g 5l, 5g, 3g, 3l bw a bw b bw c bw d input- synchronous byte write select inputs, active low. qualified with bwe to conduct byte writes to the sram. sampled on the rising edge of clk. 4m 4m gw input- synchronous global write enable input, active low. when as- serted low on the rising edge of clk, a global write is conducted (all bytes are written, regardless of the values on bw a,b,c,d and bwe ). 4h 4h bwe input- synchronous byte write enable input, active low. sampled on the rising edge of clk. this signal must be asserted low to conduct a byte write. 4k 4k clk input-clock clock input. used to capture all synchronous inputs to the device. also used to increment the burst counter when adv is asserted low, during a burst operation. 4e 4e ce 1 input- synchronous chip enable 1 input, active low. sampled on the rising edge of clk. used in conjunction with ce 2 and ce 3 to select/deselect the device. adsp is ig- nored if ce 1 is high. 97 97 ce 2 input- synchronous chip enable 2 input, active high. sampled on the rising edge of clk. used in conjunction with ce 1 and ce 3 to select/deselect the device. this pin will be used for address expansion to the next density sram. 92 92 ce 3 input- synchronous chip enable 3 input, active low. sampled on the rising edge of clk. used in conjunction with ce 1 and ce 2 to select/deselect the device. 4f 4f oe input- asynchronous output enable, asynchronous input, active low. controls the direction of the i/o pins. when low, the i/o pins behave as outputs. when deasserted high, i/o pins are three-stated, and act as input data pins. oe is masked during the first clock of a read cycle when emerging from a deselected state. 4g 4g adv input- synchronous advance input signal, sampled on the rising edge of clk. when asserted, it automatically increments the address in a burst cycle. 4a 4a adsp input- synchronous address strobe from processor, sampled on the ris- ing edge of clk. when asserted low, a is captured in the address registers. a [1:0] are also loaded into the burst counter. when adsp and adsc are both asserted, only adsp is recognized. asdp is ignored when ce 1 is deasserted high. 4b 4b adsc input- synchronous address strobe from controller, sampled on the ris- ing edge of clk. when asserted low, a [x:0] is cap- tured in the address registers. a [1:0] are also loaded into the burst counter. when adsp and adsc are both asserted, only adsp is recognized.
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 7 3r 3r mode input- static selects burst order. when tied to gnd selects linear burst sequence. when tied to v ddq or left floating selects interleaved burst sequence. this is a strap pin and should remain static during device opera- tion. 7t 7t zz input- asynchronous zz ? sleep ? input. this active high input places the device in a non-time critical ? sleep ? condition with data integrity preserved. (a)6f, 6h, 6l, 6n, 7e, 7g, 7k, 7p (b)1d, 1h, 1l, 1n, 2e, 2g, 2k, 2m (a)6k, 6l, 6m, 6n, 7k, 7l, 7n, 7p (b)6e, 6f, 6g, 6h, 7d, 7e, 7g, 7h (c)1d, 1e, 1g, 1h, 2e, 2f, 2g, 2h (d)1k, 1l, 1n, 1p, 2k, 2l, 2m, 2n nc,dq a nc,dq b nc,dq c nc,dq d i/o- synchronous bidirectional data i/o lines. as inputs, they feed into an on-chip data register that is triggered by the rising edge of clk. as outputs, they deliver the data con- tained in the memory location specified by a during the previous clock rise of the read cycle. the direc- tion of the pins is controlled by oe . when oe is as- serted low, the pins behave as outputs. when high, dq x and dp x are placed in a three-state con- dition. on the cy7c1365 sram, these are not connect pins. 6d, 2p 6p, 6d, 2d, 2p dp a dp b dp c dp d i/o- synchronous bidirectional data i/o lines. as inputs, they feed into an on-chip data register that is triggered by the rising edge of clk. as outputs, they deliver the data con- tained in the memory location specified by a during the previous clock rise of the read cycle. the direc- tion of the pins is controlled by oe . when oe is as- serted low, the pins behave as outputs. when high, dq a ? dq b and dp a ? dp d are placed in a three-state condition. u5 u5 tdo jtag serial output, synchronous serial data-out to the jtag circuit. delivers data on the negative edge of tck. u3 u3 tdi jtag serial input, synchronous serial data-in to the jtag circuit. sampled on the rising edge of tck. u2 u2 tms test mode select, synchronous this pin controls the test access port state ma- chine. sampled on the rising edge of tck. u4 u4 tck jtag-clock clock input to the jtag circuitry. 2j, 4c, 4j, 4r, 5r, 6j 2j, 4c, 4j, 4r, 5r, 6j v dd power supply power supply inputs to the core of the device. should be connected to 2.5v power supply. 3d, 3e, 3f, 3h, 3k, 3m, 3n, 3p, 5d, 5e, 5f, 5h. 5k, 5m, 5n, 5p 3d, 3e, 3f, 3h, 3k, 3m, 3n, 3p, 5d, 5e, 5f, 5h. 5k, 5m, 5n, 5p v ss ground ground for the device. should be connected to ground of the system. 1a, 1f, 1j, 1m, 1u, 7a, 7f, 7j, 7m, 7u 1a, 1f, 1j, 1m, 1u, 7a, 7f, 7j, 7m, 7u v ddq i/o power supply power supply for the i/o circuitry. should be con- nected to a 2.5v power supply. 1b, 1c, 1e, 1g, 1k, 1p, 1r, 1t, 2d, 2f, 2h, 2l, 2n, 3j, 4d, 4l, 4t, 5j, 6e, 6g, 6k, 6m, 6p, 6u, 7b, 7c, 7d, 7h, 7l, 7n, 7r 1b, 1c, 1r, 1t, 2t, 3j, 4d, 4l, 5j, 6t, 6u, 7b, 7c, 7r nc - no connects. 6u 6u dnu do not use pins. these pins should be left floating. pin definitions (119-ball bga) (continued) x18 pin location x36 pin location name i/o description
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 8 functional description single read accesses this access is initiated when the following conditions are sat- isfied at clock rise: (1) adsp or adsc is asserted low, (2) ce 1 , ce 2 , ce 3 are all asserted active, and (3) the write signals (gw , bwe ) are all deasserted high. adsp is ignored if ce 1 is high. the address presented to the address inputs is stored into the address advancement logic and the address register while being presented to the memory core. if the oe input is asserted low, the requested data will be available at the data outputs a maximum to t cdv after clock rise. adsp is ignored if ce 1 is high. single write accesses initiated by adsp this access is initiated when both of the following conditions are satisfied at clock rise: (1) adsp is asserted low, and (2) ce 1 , ce 2 , ce 3 are all asserted active. the address presented is loaded into the address register and the address advance- ment logic while being delivered to the ram core. the write signals (gw , bwe , and bw x ) and adv inputs are ignored dur- ing this first clock cycle. if the write inputs are asserted active (see write cycle descriptions table for appropriate states that indicate a write) on the next clock rise, the appropriate data will be latched and written into the device. the cy7c1361v25/CY7C1365V25/cy7c1363v25 provides byte write capability that is described in the write cycle description table. asserting the byte write enable input (bwe ) with the selected byte write (bw a,b,c,d for cy7c1361v25/ CY7C1365V25 and bw a,b for cy7c1363v25) input will selec- tively write to only the desired bytes. bytes not selected during a byte write operation will remain unaltered. all i/os are three- stated during a byte write. because the cy7c1361v25/CY7C1365V25/cy7c1363v25 is a common i/o device, the output enable (oe ) must be deasserted high before presenting data to the dq x inputs. doing so will three-state the output drivers. as a safety precau- tion, dq x are automatically three-stated whenever a write cy- cle is detected, regardless of the state of oe . single write accesses initiated by adsc adsc write accesses are initiated when the following condi- tions are satisfied: (1) adsc is asserted low, (2) adsp is deasserted high, (3) ce 1 , ce 2 , ce 3 are all asserted active, and (4) the appropriate combination of the write inputs (gw , bwe , and bw x ) are asserted active to conduct a write to the desired byte(s). adsc is ignored if adsp is active low. the address presented to a [18:0] is loaded into the address register and the address advancement logic while being deliv- ered to the ram core. the adv input is ignored during this cycle. if a global write is conducted, the data presented to the dq x is written into the corresponding address location in the ram core. if a byte write is conducted, only the selected bytes are written. bytes not selected during a byte write operation will remain unaltered. all i/os are three-stated during a byte write. because the cy7c1361v25/CY7C1365V25/cyc7c1363v25 is a common i/o device, the output enable (oe ) must be deasserted high before presenting data to the dq x inputs. doing so will three-state the output drivers. as a safety precau- tion, dq x are automatically three-stated whenever a write cy- cle is detected, regardless of the state of oe . burst sequences the cy7c1361v25/CY7C1365V25/cy7c1363v25 provides a two-bit wraparound counter, fed by a [1:0] , that implements either an interleaved or linear burst sequence. to support pro- cessors that follow a linear burst sequence. the burst se- quence is user selectable through the mode input. asserting adv low at clock rise will automatically increment the burst counter to the next address in the burst sequence. both read and write burst operations are supported. sleep mode the zz input pin is an asynchronous input. asserting zz high places the sram in a power conservation ? sleep ? mode. two clock cycles are required to enter into or exit from this ? sleep ? mode. while in this mode, data integrity is guaranteed. ac- cesses pending when entering the ? sleep ? mode are not con- sidered valid nor is the completion of the operation guaran- teed. the device must be deselected prior to entering the ? sleep ? mode. ce 1 , ce 2 , ce 3, adsp , and adsc must remain inactive for the duration of t zzrec after the zz input returns low. leaving zz unconnected defaults the device into an ac- tive state. interleaved burst sequence first address second address third address fourth address a [1:0] a [1:0] a [1:0] a [1:0] 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 linear burst sequence first address second address third address fourth address a [1:0] a [1:0] a [1:0] a [1:0] 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 9 zz mode electrical characteristics parameter description test conditions min max unit i cczz snooze mode standby current zz > v dd ? 0.2v 15 ma t zzs device operation to zz zz > v dd ? 0.2v 2t cyc ns t zzrec zz recovery time zz < 0.2v 2t cyc ns cycle descriptions [1, 2, 3] next cycle add. used zz ce 3 ce 2 ce 1 adsp adsc adv oe dq write unselected none l x x 1 x 0 x x hi-z x unselected none l 1 x 0 0 x x x hi-z x unselected none l x 0 0 0 x x x hi-z x unselected none l 1 x 0 1 0 x x hi-z x unselected none l x 0 0 1 0 x x hi-z x begin read external l 0 1 0 0 x x x hi-z x begin read external l 0 1 0 1 0 x x hi-z read continue read next l x x x 1 1 0 1 hi-z read continue read next l x x x 1 1 0 0 dq read continue read next l x x 1 x 1 0 1 hi-z read continue read next l x x 1 x 1 0 0 dq read suspend read current l x x x 1 1 1 1 hi-z read suspend read current l x x x 1 1 1 0 dq read suspend read current l x x 1 x 1 1 1 hi-z read suspend read current l x x 1 x 1 1 0 dq read begin write current l x x x 1 1 1 x hi-z write begin write current l x x 1 x 1 1 x hi-z write begin write external l 0 1 0 1 0 x x hi-z write continue write next l x x x 1 1 0 x hi-z write continue write next l x x 1 x 1 0 x hi-z write suspend write current l x x x 1 1 1 x hi-z write suspend write current l x x 1 x 1 1 x hi-z write zz ? sleep ? none h x x x x x x x hi-z x note: 1. x = ? don't care ? , 1 = high, 0 = low. 2. the sram always initiates a read cycle when adsp asserted, regardless of the state of gw , bwe , or bw x . writes may occur only on subsequent clocks after the adsp or with the assertion of adsc . as a result, oe must be driven high prior to the start of the write cycle to allow the outputs to three-state. oe is a ? don't care ? for the remainder of the write cycle. 3. oe is asynchronous and is not sampled with the clock rise. it is masked internally during write cycles. during a read cycle dq = high-z when oe is inactive or when the device is deselected, and dq = data when oe is active.
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 10 write cycle description [1, 2, 3] function (1361/1365) gw bwe bw d bw c bw b bw a read 1 1xxxx read 101111 write byte 0 - dq a 101110 write byte 1 - dq b 101101 write bytes 1, 0 101100 write byte 2 - dq c 101011 write bytes 2, 0 101010 write bytes 2, 1 101001 write bytes 2, 1, 0 101000 write byte 3 - dq d 100111 write bytes 3, 0 100110 write bytes 3, 1 100101 write bytes 3, 1, 0 100100 write bytes 3, 2 100011 write bytes 3, 2, 0 100010 write bytes 3, 2, 1 100001 write all bytes 100000 write all bytes 0 xxxxx function (1363) gw bwe bw b bw a read 1 1 x x read 1 0 1 1 write byte 0 - dq a and dp a 1010 write byte 1 - dq b and dp b 1001 write all bytes 1 0 0 0 write all bytes 0 x x x
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 11 ieee 1149.1 serial boundary scan (jtag) the cy7c1361/63 incorporates a serial boundary scan test access port (tap) in the fbga package only. the tqfp pack- age does not offer this functionality. this port operates in ac- cordance with ieee standard 1149.1-1900, but does not have the set of functions required for full 1149.1 compliance. these functions from the ieee specification are excluded because their inclusion places an added delay in the critical speed path of the sram. note that the tap controller functions in a man- ner that does not conflict with the operation of other devices using 1149.1 fully compliant taps. the tap operates using jedec-standard 2.5v i/o logic levels. disabling the jtag feature it is possible to operate the sram without using the jtag feature. to disable the tap controller, tck must be tied low (v ss ) to prevent clocking of the device. tdi and tms are in- ternally pulled up and may be unconnected. they may alter- nately be connected to v dd through a pull-up resistor. tdo should be left unconnected. upon power-up, the device will come up in a reset state which will not interfere with the oper- ation of the device. test access port (tap) - test clock the test clock is used only with the tap controller. all inputs are captured on the rising edge of tck. all outputs are driven from the falling edge of tck. test mode select the tms input is used to give commands to the tap controller and is sampled on the rising edge of tck. it is allowable to leave this pin unconnected if the tap is not used. the pin is pulled up internally, resulting in a logic high level. test data-in (tdi) the tdi pin is used to serially input information into the regis- ters and can be connected to the input of any of the registers. the register between tdi and tdo is chosen by the instruc- tion that is loaded into the tap instruction register. for infor- mation on loading the instruction register, see the tap con- troller state diagram. tdi is internally pulled up and can be unconnected if the tap is unused in an application. tdi is connected to the most significant bit (msb) on any register. test data out (tdo) the tdo output pin is used to serially clock data-out from the registers. the output is active depending upon the current state of the tap state machine (see tap controller state diagram). the output changes on the falling edge of tck. tdo is connected to the least significant bit (lsb) of any register. performing a tap reset a reset is performed by forcing tms high (v dd ) for five rising edges of tck. this reset does not affect the operation of the sram and may be performed while the sram is operating. at power-up, the tap is reset internally to ensure that tdo comes up in a high-z state. tap registers registers are connected between the tdi and tdo pins and allow data to be scanned into and out of the sram test circuit- ry. only one register can be selected at a time through the instruction registers. data is serially loaded into the tdi pin on the rising edge of tck. data is output on the tdo pin on the falling edge of tck. instruction register three-bit instructions can be serially loaded into the instruction register. this register is loaded when it is placed between the tdi and tdo pins as shown in the tap controller block diagram. upon power-up, the instruction register is loaded with the idcode instruction. it is also loaded with the idcode instruction if the controller is placed in a reset state as de- scribed in the previous section. when the tap controller is in the captureir state, the two least significant bits are loaded with a binary ? 01 ? pattern to allow for fault isolation of the board level serial test path. bypass register to save time when serially shifting data through registers, it is sometimes advantageous to skip certain states. the bypass register is a single-bit register that can be placed between tdi and tdo pins. this allows data to be shifted through the sram with minimal delay. the bypass register is set low (v ss ) when the bypass instruction is executed. boundary scan register the boundary scan register is connected to all the input and output pins on the sram. several no connect (nc) pins are also included in the scan register to reserve pins for higher density devices. the x36 configuration has a xx-bit-long regis- ter, and the x18 configuration has a yy-bit-long register. the boundary scan register is loaded with the contents of the ram input and output ring when the tap controller is in the capture-dr state and is then placed between the tdi and tdo pins when the controller is moved to the shift-dr state. the extest, sample/preload and sample z instruc- tions can be used to capture the contents of the input and output ring. the boundary scan order tables show the order in which the bits are connected. each bit corresponds to one of the bumps on the sram package. the msb of the register is connected to tdi, and the lsb is connected to tdo. identification (id) register the id register is loaded with a vendor-specific, 32-bit code during the capture-dr state when the idcode command is loaded in the instruction register. the idcode is hardwired into the sram and can be shifted out when the tap controller is in the shift-dr state. the id register has a vendor code and other information described in the identification register defi- nitions table. tap instruction set eight different instructions are possible with the three-bit in- struction register. all combinations are listed in the instruction code table. three of these instructions are listed as reserved and should not be used. the other five instruc- tions are described in detail below. the tap controller used in this sram is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully implemented. the tap controller can- not be used to load address, data, or control signals into the
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 12 sram and cannot preload the input or output buffers. the sram does not implement the 1149.1 commands extest or intest or the preload portion of sample / preload; rather it performs a capture of the inputs and output ring when these instructions are executed. instructions are loaded into the tap controller during the shift-ir state when the instruction register is placed between tdi and tdo. during this state, instructions are shifted through the instruction register through the tdi and tdo pins. to execute the instruction once it is shifted in, the tap control- ler needs to be moved into the update-ir state. extest extest is a mandatory 1149.1 instruction which is to be ex- ecuted whenever the instruction register is loaded with all 0s. extest is not implemented in the tap controller, and there- fore this device is not compliant to the 1149.1 standard. the tap controller does recognize an all-0 instruction. when an extest instruction is loaded into the instruction register, the sram responds as if a sample / preload instruction has been loaded. there is one difference between the two instructions. unlike the sample / preload instruction, extest places the sram outputs in a high-z state. idcode the idcode instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. it also places the instruction register between the tdi and tdo pins and allows the idcode to be shifted out of the device when the tap con- troller enters the shift-dr state. the idcode instruction is loaded into the instruction register upon power-up or whenever the tap controller is given a test logic reset state. sample z the sample z instruction causes the boundary scan register to be connected between the tdi and tdo pins when the tap controller is in a shift-dr state. it also places all sram outputs into a high-z state. sample / preload sample / preload is a 1149.1 mandatory instruction. the preload portion of this instruction is not implemented, so the tap controller is not fully 1149.1 compliant. when the sample / preload instructions are loaded into the instruction register and the tap controller is in the cap- ture-dr state, a snapshot of data on the inputs and output pins is captured in the boundary scan register. the user must be aware that the tap controller clock can only operate at a frequency up to 10 mhz, while the sram clock operates more than an order of magnitude faster. because there is a large difference in the clock frequencies, it is possible that during the capture-dr state, an input or output will under- go a transition. the tap may then try to capture a signal while in transition (metastable state). this will not harm the device, but there is no guarantee as to the value that will be captured. repeatable results may not be possible. to guarantee that the boundary scan register will capture the correct value of a signal, the sram signal must be stabilized long enough to meet the tap controller's capture set-up plus hold times (t cs and t ch ). the sram clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a sample / preload instruction. if this is an issue, it is still possible to capture all other signals and simply ignore the value of the ck and ck# captured in the boundary scan register. once the data is captured, it is possible to shift out the data by putting the tap into the shift-dr state. this places the bound- ary scan register between the tdi and tdo pins. note that since the preload part of the command is not implemented, putting the tap into the update to the update- dr state while performing a sample / preload instruction will have the same effect as the pause-dr command. bypass when the bypass instruction is loaded in the instruction reg- ister and the tap is placed in a shift-dr state, the bypass register is placed between the tdi and tdo pins. the advan- tage of the bypass instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. reserved these instructions are not implemented but are reserved for future use. do not use these instructions.
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 13 tap controller state diagram test-logic reset test-logic/ idle select dr-scan capture-dr shift-dr exit1-dr pause-dr exit2-dr update-dr select ir-scan capture-dr shift-ir exit1-ir pau se -i r exit2-ir update-ir 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 1 1 note: the 0/1 next to each state represents the value at tms at the rising edge of tck.
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 14 tap controller block diagram 0 0 1 2 . . 29 30 31 boundary scan register identification register 0 1 2 . . . . x 0 1 2 instruction register bypass register selection circuitry selection circuitry tap controller tdi tdo tck tms tap electrical characteristics over the operating range [4, 5] parameter description test conditions min. max. unit v oh1 output high voltage i oh = ? 2.0 ma 1.7 v v oh2 output high voltage i oh = ? 100 ma 2.1 v v ol1 output low voltage i ol = 2.0 ma 0.7 v v ol2 output low voltage i ol = 100 ma 0.2 v v ih input high voltage 1.7 v dd +0.3 v v il input low voltage ? 0.3 0.7 v i x input load current gnd < v i < v ddq ? 5 5 ma notes: 4. all voltage referenced to ground. 5. overshoot: v ih (ac)< v dd +1.5v for t< t tcyc /2, undershoot:v il (ac)< 0.5v for t< t tcyc /2, power-up: v ih <2.6v and v dd <2.4v and v ddq <1.4v for t<200 ms.
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 15 tap ac switching characteristics over the operating range [6, 7] parameter description min. max. unit t tcyc tck clock cycle time 100 ns t tf tck clock frequency 10 mhz t th tck clock high 40 ns t tl tck clock low 40 ns set-up times t tmss tms set-up to tck clock rise 10 ns t tdis tdi set-up to tck clock rise 10 ns t cs capture set-up to tck rise 10 ns hold times t tmsh tms hold after tck clock rise 10 ns t tdih tdi hold after clock rise 10 ns t ch capture hold after clock rise 10 ns output times t tdov tck clock low to tdo valid 20 ns t tdox tck clock low to tdo invalid 0 ns notes: 6. t cs and t ch refer to the set-up and hold time requirements of latching data from the boundary scan register. 7. test conditions are specified using the load in tap ac test conditions. t r /t f = 1 ns.
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 16 tap timing and test conditions (a) tdo c l =20pf z 0 =50 ? gnd 1.25v test clock test mode select tck tms test data-in tdi test data-out tdo t tcyc t tmsh t tl t th t tmss t tdis t tdih t tdox t tdov 50 ? 2.5v 0v all input pulses 1.25v
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 17 identification register definitions instruction field value description revision number (31:28) tbd reserved for version number device depth (27:23) tbd defines depth of sram device width (22:18) tbd defines with of the sram cypress device id (17:12) tbd reserved for future use cypress jedec id (11:1) tbd allows unique identification of sram vendor id register presence (0) tbd indicate the presence of an id register scan register sizes register name bit size instruction 3 bypass 1 id 32 boundary scan tbd identification codes instruction code description extest 000 captures the input/output ring contents. places the boundary scan register between the tdi and tdo. forces all sram outputs to high-z state. this instruction is not 1149.1 compliant. idcode 001 loads the id register with the vendor id code and places the register be- tween tdi and tdo. this operation does not affect sram operation. sample z 010 captures the input/output contents. places the boundary scan register be- tween tdi and tdo. forces all sram output drivers to a high-z state. reserved 011 do not use: this instruction is reserved for future use. sample/preload 100 captures the input/output ring contents. places the boundary scan register between tdi and tdo. does not affect the sram operation. this instruction does not implement 1149.1 preload function and is therefore not 1149.1 compliant. reserved 101 do not use: this instruction is reserved for future use. reserved 110 do not use: this instruction is reserved for future use. bypass 111 places the bypass register between tdi and tdo. this operation does not affect sram operation.
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 18 boundary scan order bit # signal name bump id bit # signal name bump id 1 tbd tbd 36 tbd tbd 2 tbd tbd 37 tbd tbd 3 tbd tbd 38 tbd tbd 4 tbd tbd 39 tbd tbd 5 tbd tbd 40 tbd tbd 6 tbd tbd 41 tbd tbd 7 tbd tbd 42 tbd tbd 8 tbd tbd 43 tbd tbd 9 tbd tbd 44 tbd tbd 10 tbd tbd 45 tbd tbd 11 tbd tbd 46 tbd tbd 12 tbd tbd 47 tbd tbd 13 tbd tbd 48 tbd tbd 14 tbd tbd 49 tbd tbd 15 tbd tbd 50 tbd tbd 16 tbd tbd 51 tbd tbd 17 tbd tbd 52 tbd tbd 18 tbd tbd 53 tbd tbd 19 tbd tbd 54 tbd tbd 20 tbd tbd 55 tbd tbd 21 tbd tbd 56 tbd tbd 22 tbd tbd 57 tbd tbd 23 tbd tbd 58 tbd tbd 24 tbd tbd 59 tbd tbd 25 tbd tbd 60 tbd tbd 26 tbd tbd 61 tbd tbd 27 tbd tbd 62 tbd tbd 28 tbd tbd 63 tbd tbd 29 tbd tbd 64 tbd tbd 30 tbd tbd 65 tbd tbd 31 tbd tbd 66 tbd tbd 32 tbd tbd 67 tbd tbd 33 tbd tbd 68 tbd tbd 34 tbd tbd 69 tbd tbd 35 tbd tbd 70 tbd tbd 71 tbd tbd tbd tbd 72 tbd tbd tbd tbd 73 tbd tbd tbd tbd 74 tbd tbd tbd tbd 75 tbd tbd tbd tbd 76 tbd tbd tbd tbd 77 tbd tbd tbd tbd 78 tbd tbd tbd tbd 79 tbd tbd tbd tbd 80 tbd tbd tbd tbd 81 tbd tbd tbd tbd 82 tbd tbd tbd tbd 83 tbd tbd tbd tbd 84 tbd tbd tbd tbd 85 tbd tbd tbd tbd 86 tbd tbd tbd tbd 87 tbd tbd tbd tbd 88 tbd tbd tbd tbd 89 tbd tbd tbd tbd 90 tbd tbd tbd tbd 91 tbd tbd tbd tbd 92 tbd tbd tbd tbd 93 tbd tbd tbd tbd 94 tbd tbd tbd tbd 95 tbd tbd tbd tbd 96 tbd tbd tbd tbd 97 tbd tbd tbd tbd 98 tbd tbd tbd tbd 99 tbd tbd tbd tbd boundary scan order bit # signal name bump id bit # signal name bump id
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 19 maximum ratings (above which the useful life may be impaired. for user guide- lines only, not tested.) storage temperature ................................. ? 65 c to +150 c ambient temperature with power applied ............................................. ? 55 c to +125 c supply voltage on v dd relative to gnd........ ? 0.5v to +3.6v dc voltage applied to outputs in high z state [9] ................................. ? 0.5v to v ddq + 0.5v dc input voltage [9] .............................. ? 0.5v to v ddq + 0.5v current into outputs (low)......................................... 20 ma static discharge voltage .......................................... >2001v (per mil-std-883, method 3015) latch-up current.................................................... >200 ma . operating range range ambient temperature [8] v dd /v ddq com ? l 0 c to + 70 c 2.5v 5% electrical characteristics over the operating range parameter description test conditions min. max. unit v dd power supply voltage 2.375 2.625 v v ddq i/o supply voltage 2.375 2.625 v v oh output high voltage v dd = min., i oh = ? 1.0 ma 2.0 v v ol output low voltage v dd = min., i ol = 1.0 ma 0.2 v v ih input high voltage 1.7 v dd + 0.3v v v il input low voltage [9] ? 0.3 0.7 v i x input load current except zz and mode gnd < v i < v ddq ? 5 5 ma input current of mode ? 30 30 ma input current of zz input = v ss ? 5 ma input = v ddq 30 ma i oz output leakage current gnd < v i < v ddq, output disabled ? 1.0 1.0 ma i dd v dd operating supply current v dd = max., i out = 0 ma, f = f max = 1/t cyc 7.5-ns cycle, 133 mhz 350 ma 8.8-ns cycle, 113 mhz 300 ma 10-ns cycle, 100 mhz 260 ma 12.5-ns cycle, 80 mhz 210 ma i sb1 automatic cs power-down current ? ttl inputs max. v dd , device deselected, v in > v ih or v in < v il f = f max = 1/t cyc 7.5-ns cycle, 133 mhz 90 ma 8.8-ns cycle, 113 mhz 80 ma 10-ns cycle, 100 mhz 70 ma 12.5-ns cycle, 80 mhz 65 ma i sb2 automatic cs power-down current ? cmos inputs max. v dd , device deselected, v in < 0.3v or v in > v ddq ? 0.3v, f = 0 10 ma i sb3 automatic cs power-down current ? cmos inputs max. v dd , device deselected, or v in < 0.3v or v in > v ddq ? 0.3v f = f max = 1/t cyc 7.5-ns cycle, 133 mhz 45 ma 8.8-ns cycle, 113 mhz 40 ma 10-ns cycle, 100 mhz 35 ma 12.5-ns cycle, 80 mhz 30 ma i sb4 automatic cs power-down current ? ttl inputs max. v dd , device deselected, v in > v ih or v in < v il , f = 0 25 ma shaded areas contain advance information. notes: 8. t a is the case temperature. 9. minimum voltage equals ? 2.0v for pulse durations of less than 20 ns.
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 20 capacitance [10] parameter description test conditions max. unit c in input capacitance t a = 25 c, f = 1 mhz, v dd = v ddq = 2.5v 4 pf c clk clock input capacitance 4 pf c i/o input/output capacitance 4 pf ac test loads and waveforms notes: 10. tested initially and after any design or process changes that may affect these parameters. 11. input waveform should have a slew rate of > 1 v/ns. output r = 1667 ? r = 1538 ? 5pf including jig and scope (a) (b) output r l = 50 ? z 0 = 50 ? v l = 1.25v 2.5v all input pulses [11] 2.5v gnd 90% 10% 90% 10% 2.0 ns 2.0 ns (c)
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 21 switching characteristics over the operating range [12, 13, 14] -133 -117 -100 -80 parameter description min. max. min. max. min. max. min. max. unit t cyc clock cycle time 7.5 8.5 10.0 12.5 ns t ch clock high 1.9 3.0 3.2 4.0 ns t cl clock low 1.9 3.0 3.2 4.0 ns t as address set-up before clk rise 1.5 2 2 2.0 ns t ah address hold after clk rise 0.5 0.5 0.5 0.5 ns t co data output valid after clk rise 6.5 7.5 8.5 10.0 ns t doh data output hold after clk rise 1.5 1.5 1.5 1.5 ns t ads adsp, adsc set-up before clk rise 1.5 2 2 2.0 ns t adh adsp, adsc hold after clk rise 0.5 0.5 0.5 0.5 ns t wes bwe, gw, bw[3:0] set-up before clk rise 1.5 2 2 2.0 ns t weh bwe, gw, bw[3:0] hold after clk rise 0.5 0.5 0.5 0.5 ns t advs adv set-up before clk rise 1.5 2.0 2.0 2.0 ns t advh adv hold after clk rise 0.5 0.5 0.5 0.5 ns t ds data input set-up before clk rise 1.5 2.0 2.0 2.0 ns t dh data input hold after clk rise 0.5 0.5 0.5 0.5 ns t ces chip enable set-up 1.5 2 2 2.0 ns t ceh chip enable hold after clk rise 0.5 0.5 0.5 0.5 ns t chz clock to high-z [13, 14, 15] 0 3.5 0 3.5 0 3.5 0 3.5 ns t clz clock to low-z [13, 14, 15] 0 0 0 0 ns t eohz oe high to output high-z [13, 14] 3.5 3.5 3.5 3.5 ns t eolz oe low to output low-z [13, 14] 0 0 0 0 ns t eov oe low to output valid [13, 14] 3.5 4.2 5.0 5.0 ns notes: 12. unless otherwise noted, test conditions assume signal transition time of 2.5 ns or less, timing reference levels of 1.25v, i nput pulse levels of 0 to 2.5v, and output loading of the specified i ol /i oh and load capacitance. shown in (a), (b) and (c) of ac test loads. 13. t chz , t clz , t oev , t eolz , and t eohz are specified with a load capacitance of 5 pf as in part (b) of ac test loads. transition is measured 200 mv from steady- state voltage. 14. at any given voltage and temperature, t chz (max.) is less than t clz (min.). 15. this parameter is sampled and not 100% tested.
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 22 timing diagrams write cycle timing [16, 17] notes: 16. we is the combination of bwe , bw x , and gw to define a write cycle (see write cycle description table). 17. wdx stands for write data to address x. adsp clk adsc adv add ce 1 oe gw we ce 2 ce 3 1a data- in t cyc t ch t cl t ads t adh t ads t adh t advs t advh wd1 wd2 wd3 t ah t as t ws t wh t wh t ws t ces t ceh t ces t ceh t ces t ceh 2b 3a 1a single write burst write unselected adsp ignored with ce 1 inactive ce 1 masks adsp = don ? t care = undefined pipelined write 2a 2c 2d t dh t ds high-z high-z unselected with ce 2 adv must be inactive for adsp write adsc initiated write
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 23 read cycle timing [16, 18] note: 18. rdx stands for read data from address x. timing diagrams (continued) adsp clk adsc adv add ce 1 oe gw we ce 2 ce 3 2a 2c 1a data out t cyc t ch t cl t ads t adh t ads t adh t advs t advh rd1 rd2 rd3 t ah t as t ws t wh t wh t ws t ces t ceh t ces t ceh t ces t ceh t cdv t eov 2b 2c 2d 3a 1a t oehz t doh t clz t chz single read burst read unselected adsp ignored with ce 1 inactive suspend burst ce 1 masks adsp = don ? t care = undefined pipelined read adsc initiated read unselected with ce 2
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 24 timing diagrams (continued) in/out a t ah t as = don ? t care = undefined we is the combination of bwe , bw x , and gw to define a write cycle (see write cycle description table). t clz t chz ce is the combination of ce 2 and ce 3 . all chip selects need to be active in order to select the device. rax stands for read address x, wax stands for write address x, dx stands for data-in x, t doh clk add we ce 1 data b c d adsp adsc adv ce oe q(a) q(b) q (b+1) q (b+2) q (b+3) q(b) d(c) d (c+1) d (c+2) d (c+3) q(d) t cyc t ch t cl t ads t adh t ads t adh t advh t advs t ceh t ceh t ces t ces t weh t wes t cdv read/write timing device originally deselected adsp ignored with ce 1 high t eohz qx stands for data-out x.
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 25 timing diagrams (continued) pipeline timing t as = don ? t care = undefined t clz t chz t doh clk add we ce 1 data in/out adsc adsp adv ce oe d(c) t cyc t ch t cl t ads t adh t ceh t ces t weh t wes t cdv adsp ignored with ce 1 high rd1 rd2 rd3 rd4 wd1 wd2 wd3 wd4 1a out 2a out 3a out 4a out 1a in 2a in 3a in 4a in back to back reads adsp initiated reads adsc initiated reads back to back writes
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 26 timing diagrams (continued) oe three-state i/os t eohz t eov t eolz oe switching waveforms
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 27 notes: 19. device must be deselected when entering zz mode. see cycle description for all possible signal conditions to deselect the de vice. 20. i/os are in three-state when exiting zz sleep mode. timing diagrams (continued) adsp clk adsc ce 1 ce 3 low high zz t zzs t zzrec i cc i cc (active) three-state i/os zz mode timing [19, 20] ce 2 i cczz high
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 28 ordering information speed (mhz) ordering code package name package type operating range 133 cy7c1361v25-133ac a101 100-lead thin quad flat pack commercial 117 cy7c1361v25-117ac 100 cy7c1361v25-100ac 80 cy7c1361v25-80ac 133 cy7c1363v25-133ac a101 100-lead thin quad flat pack commercial 117 cy7c1363v25-117ac 100 cy7c1363v25-100ac 80 cy7c1363v25-80ac 133 CY7C1365V25-133ac a101 100-lead thin quad flat pack commercial 117 CY7C1365V25-117ac 100 CY7C1365V25-100ac 80 CY7C1365V25-80ac 133 cy7c1361v25-133bgc bg119 119-ball bga commercial 117 cy7c1361v25-117bgc 100 cy7c1361v25-100bgc 80 cy7c1361v25-80bgc 133 cy7c1363v25-133bgc bg119 119-ball bga commercial 117 cy7c1363v25-117bgc 100 cy7c1363v25-100bgc 80 cy7c1363v25-80bgc 133 CY7C1365V25-133bgc bg119 119-ball bga commercial 117 CY7C1365V25-117bgc 100 CY7C1365V25-100bgc 80 CY7C1365V25-80bgc shaded areas contain advance information. document #: 38 ? 00761 ? p
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary 29 package diagrams 100-pin thin plastic quad flatpack (14 x 20 x 1.4 mm) a101 51-85050-a
cy7c1361v25 cy7c1363v25 CY7C1365V25 preliminary ? cypress semiconductor corporation, 1999. the information contained herein is subject to change without notice. cypress semico nductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress semiconductor product. nor does it convey or imply any license unde r patent or other rights. cypress semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected t o result in significant injury to the user. the inclusion of cypress semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in do ing so indemnifies cypress semiconductor against all charges. revision history package diagrams (continued) 119-lead fbga (14 x 22 x 2.4 mm) bg119 51-85115 document title: cy7c1361v25/cy7c1363v25/CY7C1365V25 document number: 38-00761 rev. ecn no. issue date orig. of change description of change ** 2561 4/29/99 skx 1. new data sheet *a 2684 9/10/99 skx 1. updated the bga pinout 2. added revision history

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